Hi, We have problems controlling the strength of sealing when we perform anodic bonding in an atmosphere with low flow of Argon during the bond procedure of silicon substrates to Borofloat glass wafers. It is probably due to the charging affects. Does anyone have similar difficulties and solutions to improve the quality of bonding (preparation & sealing procedure)? Thank you very much for the help. Regards, Dr. Christophe Gorecki Directeur de Recherche CNRS Département MN2S, Institut FEMTO-ST UFR des Sciences et Techniques 16 route de Gray, 25030 Besançon, France Tel: +33-3-81666607 Fax: +33-3-81666423 e-mail: christophe.gorecki@femto-st.fr