Conformal deposition of PECVD TEOS in deep silicon Vias
Pradeep Dixit
2009-08-20
Hello,
I would like to deposit silicon oxide layer in deep vias by PECVD TEOS
method (or any other low temperature process < 400 degree). Tool is Oxford
DP100
Via diameter is 50 um, and depth is 300 um. Deposition temp is 350
degree,power 30W, low frequency.
however i am not able to achieve conformal deposirtion in these vias,
Has anyone tried a similar method for insulation/barrier layer depositon?
Any way to solve this problem ?
It would be great if some one can share their experience in solving this
problem.
Thanks,
Pradeep