Hi everyone,
What's the effect of AZ5214E to the 400degreeC anodic bonding process?
Here is the process flow:
1 DRIE Si with a ...(...2um gap-2um line-2um gap-2um line...) ..structure,
this area is about 200um long*30um width*50um depth.
2 Thermal oxidation for 2um oxide layer (wet oxidation for about 10 hours)
3 spin the photoresist AZ5214E as positive tone for thickness of 1.5um,
then Photolith. the 2um gap-2um line area is protected by the photoresis.
note: in this step, AZ5214E will leak in to the trench in the 2um gap-2um
line area. the resist could stay in the trench til the next step. and the
top edge of trench could exposure to the BOE solution,
*Question 1: how badly the BOE will attack the lateral oxide layer side of
the trenches of in the 2um gap-2um line area ?*
4 BOE etch oxide layer away of the other area except the 2um gap-2um line
area
5 etch 7740 for a cavity.
6 allign the cavity to the 2um gap-2um line area and perform the anodic
bonding process under the temperature about 400 degreeC.
*Question2: What's the effect of residual AZ5214E in the trench to the
400degreeC anodic bonding process? *
any suggestions will be appreciated.
Best Regards,
Yan Xin
-Pen-Tung Sah MEMS Research Center,
-Xiamen University, CHINA
XMU HOME:
http://memsc.xmu.edu.cn/mems_renchaiduiwu/XuYuan_Chen-Group/index_1.html