Hi everyone,
In DRIE using ICP plasma source, After glow discharge, SF6 will be
diassosciated . There are radicals(F atom), neutrals(SF6 ? ),
electrons, positive ion(SF5+ or SFx+), negetive ion(F-).
1) How to transport the F atom to the bottom of the trench without
substrate bias help? By positive ion's (SF5+) collision?
2) Which is the main etchant, The radicals(F atom) or positive ions (SF5+)?
3) Negtive ions (F- ) cannot reach the bottom of trench, is it a waste?
4) How does the ion/neutral ratio influence the etching if the
ratical (F atom) is the main etchant?
references or suggestions will be appreciated
Yan Xin
-Pen-Tung Sah MEMS Research Center,
-Xiamen University, CHINA
XMU HOME:
http://memsc.xmu.edu.cn/mems_renchaiduiwu/XuYuan_Chen-Group/index_1.html