Hi everyone,
the process flow as follows,
1 etch cavity on the 7740 glass
2 deposit 200nm Al layer on the cavity of 7740 glass,
3 anodic bonding process with silicon, 400 degreeC, 800V
the problem:
we always find the Al grass on the al layer after the anodic bonding,
the Al grass dimension: about 2~3um long, and with a diameter of 200nm
the quantity of grass is not too much , but it cause the device short
circuit.
have somebody met this problem before? what's the source of
this phenomenon?
Any suggestions would be appreciated!
--
Yan Xin
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