How to Change Glass Roughness & How it Influences Anodic Wafer Bonding
Borosilicate glass's surface can be roughened by wet etch, but what is the
purpose of this need?
A fresh generated layer of approximately 20 nm silicon dioxide is generated
between Si and borosilicate glass. This is why recommendation for anodic bond
surface roughness to be 10 nm or better. Roughness of 200 nm will have
potential void and leakage issues at interface. You can try increase
temperature and current to get more SiO2 to fulfill interface (doubtful for 200
nm) but your glass and Si may warp due to high temperature.
Let me know if you need more assistance and good luck.
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On Mar 13, 2013, at 10:42, Vijay Rajaraman wrote:
> Hello All,
> How to make the surface of the glass substrate rough (by up to 200 nm)
> ? And how does this roughness influence the anodic bonding process and
> its interface ?
> I could imagine that higher roughness in the order of few hundreds of
> nm would create contact issues between Glass-Si wafers and lead to
> voids .
> Any useful info, pointer or reference literature, you can provide is
> much appreciated.
> Thanks a lot!
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