Where can I get a RIE dry etch condition for Si nano pattern etching?
I used normal condition such as CHF3 or SF6, 80W RIE power and 20 mTorr for the
but my nano patterned Cr mask was totally destroyed.
BTW, if I want to have a little bit vertical (not so vertical, I can accept some
undercut) sidewall for 2 um Si trench ( 2um depth),
can normal RIE (not ICP) been used for this etching?
If you have some experience, please kindly share me some tricks.
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City University of Hong Kong
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