It might help to do a somewhat aggressive oxygen plasma clean of your
sample in the DRIE to help remove telflon-like polymer from the wafer
surface. Cleaning after DRIE, in general can be quite challenging.
On Sun, May 5, 2013 at 1:59 AM, HJ Rhee wrote:
> I'm trying to remove the aluminum layer (5000A, sputtered) that was used as
> a hard mask for DRIE for structure release and having difficulty removing
> it completely using the Al etchant (Al-12S). There are residues left on
> the surface (SiO2) that look like small grains, even after leaving the
> wafer on the ethant (more than 1 hr). After a short-dip on BOE (~30s) and
> putting in the etchant, the residues are reduced but still not completely
> Anyone has an idea to completely remove these residues or has the same
> experience? I don't quite understand why BOE helepd since shouldn't
> aluminum oxide be only on the surface, not throughout the Al thin-film?
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