I assume that you mean Silicon nitride layer.
It depends on what kind of gas and condition do you use but typically
in my case more than 2 times thickness of conventional Photo resist
layer was enough to endure etch process.
With CF4 gas (RF power ~60W, pressure ~60mtorr, ?? SCCM , RIE 2000
South bay tech.)
Myung Rae Cho
Department of Physics & Astronomy
Seoul National University
Seoul 151-747 Korea
On Thu May 9 05:29:49 2013, Haider, Ahmad M wrote:
> I am trying to do an anisotropic etch of 400 nm nitride layer in a RIE
machine. A portion of the nitride is protected by a resist layer on top of it.
Can you tell approximate how much thickness of resist would I need so that the
resist doesn't get stripped off during the nitride etch?
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