Re: Selective release etch of Al sacrificial layer
I Cox
1999-02-01
Geng --
did you get any useful replies on your post? I have similar needs.
Thanks in advance for any help!
Isaiah
>Hi there,
>
>We would like to release an Al sacrificial layer (0.5 5m thickness) without
>affecting any
>other metal and dielectric layers in the structure. An undercut rate of 100
>5m+ in 10
>min. is required. The etchant should not attack PE oxide, nitride, Ti, Au.
>Any suggestions?
>Your help will be very much appreciated.
>Regards,
>
>G. Chen
>