We have just finished the design and construction of a new plasma etch tool
for MEMS Deep Silicon Etch. We are interested in working with a select number
of MEMS foundries or Universities that require an anisotropic etch profile in
silicon up to a depth of 50 microns for our first round of testing. The
system is ready to accept either 100 mm or 150 mm silicon wafers with
standard flats. Our initial results show that we can provide etch rates of
around 6.5 microns/minute with anisotropic profiles in single crystal
silicon. The side walls are very smooth with no scalloping usually associated
with the Bosch process. In addition, it is a clean process with no polymer
build-up on the chamber or on the side walls. If there is interest please
contact Bob Henderson