Dear All,
I have been using a microwave asher to remove hardened resist after RIE
etching. I tried to remove some resist residue recently on a 6" wafer that
had 1um of Cr deposited on it. I used the following parameters 600ml/min
oxygen which gives about 0.8 bar and 600W power for 60mins. I found that
the Cr had been etched and re-deposited all over the inside of the chamber
as CrOx (i think it could be) ! Does anyone have any idea about how this
might have happened ? My theory is that the microwaves have coupled into to
the wafer and increased the surface temperature.
many thanks,
Iain Watson.
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