dear fellow ,
I need to etch an Aluminium gate (0.1um) on GaAs substrates .We know how
to etch
it with a wet process and now we want to do it by RIE
with Cl2 and BCl3 gas (we had C2F6, SF6, O2,Ar, N2,CHF3 too). The
problem is that Cl2 etches GaAs too.Do you know something about the gas
:
Ratio % ,sccm ;RF power, pressure to etch Al on GaAs? BCl3 etch
Al2O3 ,do you think it's possible to oxydize Al on GaAs substrate and
etch Al2O3 after ?
Thanks you for your suggestions
Arnaud Margolli
DGA - Celar
division DIRAC-TECN
failure analysis -ECE Dep
+ 33 (0) 2 99 42 66 06