Dear Fellow,
I'm working in failure analysis of Si components
I need to reveal a junction with a RIE process
I have Cl2,BCl3 ,CHF3 ,SF6 ,C2F6 ,N2 Ar ,O2
do you know something or a process which could etch faster doped (or
undoped) regions (pressure,% of gas,RF power)?
thanks
Arnaud Margolli
DGA - Celar
division DIRAC-TECN
failure analysis -ECE Dep
+ 33 (0) 2 99 42 66 06