Hi everyone,
I am a newcomer to RIE etching,
any suggestions of particular photoresists to use as masks
for RIE etching of Silicon Nitride, to give highest selectivity,
or will they all be about the same?
In terms of gases, based on literature and conversations, it
sounds like SF6 chemistries should give much better PR to SiNx
selectivity, maybe with some O2 for speed or CHF3 to help
passivate the sidewalls, sound reasonable?
In terms of PR stripping, should just an O2 plasma work, or
will I need to do a wet strip? Avoiding wet processing
would be nice.
Thanks!
Maxwell