How to use ICP plasma etch to etch SiO2 and Si3N4 without
CF4?
Lihuan Song
2002-12-03
Dear experts,
We only have the following gases available in our Oxford plasma lab ICP
etching system, SiCl4, Cl2, CH4, H2, SF6, O2, Ar and N2. I want to etch
both SiO2 and Si3N4 (seperately, selectivey not needed, layers were CVD
grown on III-V, say GaAs substrates) with a acceptable etch rate, say
>50nm/min (preferably >100nm/min). I prefer to use resist as mask. Can
anybody give me a receipe such that I have something to start
optimzation with? Thanks a lot.
Best regards,
Lihuan
--
Lihuan Song
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