Hi Marc,


Boron solid sources have been around for well over 30 years.  Generally,
transistor and IC makers have viewed them with disdain while MEMS people
have been far more appreciative.  I found Techniglas (Columbus, Ohio) boron
sources to work rather well for two and three-micron deep diffusions.  (It
could be that the competition works well too - I don't know.)

It is my understanding that the boron is introduced into the silicon wafers
via a mechanism that involves B2O3  (i.e. probably no SiN formed on the
silicon).  I found the people at Techniglas rather knowledgeable.  They can
probably discuss the chemistry with considerable authority.  They can also
suggest recipes to get you started.

Here's a web site to get you started with Techniglas:

http://www.techneglas.com/web2/products/dopant/boron2.htm

By the way, solid sources are usually not recommended for sub-micron
diffusions.  Here, however, is a piece that talks about a process for
producing sub-micron diffusions using solid sources:

http://www.delphion.com/details?pn10=US05672541

Good luck to you,


Roger Brennan
8710 Gardners School Road
Stantonsburg, NC 27883
(252) 238-3377
rogerbr@earthlink.net


-----Original Message-----
From:   Concepcion, Marc [SMTP:Marc_Concepcion@perkinelmer.com]
Sent:   Sunday, January 05, 2003 11:23 PM
To:     'mems-talk@memsnet.org'
Subject:        [mems-talk]  Greetings!!!! I Have a Question Regarding The
Reaction of BN to S     i

Greetings!!!! My name is Marc Anthony Concepcion, and I am a Process
Engineer from PerkinElmer Optoelectronics, Philippines.

I am searching on the Internet to confirm my impression that the Boron
Nitride when reacted to Silicon will result as follows:

6BN + 3Si --> 6B + N2 to Si3N4

Am I correct in the equation above??

Please e-mail me your knowledge on this. BN serves as a Source for Boron
Ions. The Boron Ions are P-Dopants to the Silicon Wafer to produce a P-Type
layer.

Thank You.



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