Dear Mems-Talk Users,

I have another question related to the plasma-etch thinning of Shipley PR.

A Bio-Rad Barrel etcher, working at 150W 200mbar O2 plasma, etches
photoresist much much slower than 35nm/min order (the value which
Dr.Williams mentioned for parallel plate 50W) !

No problem about PR bake, chamber-contamination and others ...

Is such a slow etch rate a problem of barrel etchers or, is there another
problem?

Thank you for your help.

Oray Orkun Cellek
o.o.cellek@ieee.org
Research Assistant, Ph. D. Student
Electrical & Electronics Engineering Department
Middle East Technical University
06531 Ankara
Turkey
Tel : +90 312 210 4579
Fax : +90 312 210 1261

----- Original Message -----
From: 
To: ; 
Sent: Thursday, January 09, 2003 7:40 PM
Subject: RE: [mems-talk] photoresist (Shipley series) thinning using low
rate oxygen plasmaRIE


> > -----Original Message-----
> > From: Wei Wei [mailto:wwei1@uci.edu]
> > Sent: Wednesday, January 08, 2003 3:31 PM
> > To: mems-talk@memsnet.org
> > Subject: [mems-talk] photoresist (Shipley series) thinning using low
> > rate oxygen plasmaRIE
> > I try to use low oxygen plasma to thin my photoresist layer.
> > If anybody
> > have experience on this? Can you provide a receipe to control the
> > etching rate under 100nm/min?
> > Thanks,
> > Alex
>
> Just reduce the plasma power to slow the etch rate.
> As an example in a Technics PEII-A parallel-plate plasma etcher,
> with oxygen at 300 mTorr,
> at 400 W photoresist etches at about 350 nm/min;
> at  50 W photoresist etches at about  35 nm/min.
>
> --Kirt Williams Agilent Technologies
>
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