Hi Alex

Oxygen is probably not the best gas to use for this process.  We have had
some success using hydrogen, both for thinning resist and for removing small
amounts of residual resist.  It will react with the resist, but not as
rapidly as the oxygen, allowing a much more controlled process.
The other suggestion is to use Argon as a dilutant gas.  This will result in
some physical sputtering of the resist, but will effectively reduce the
chemical part of the etch as the concentration of free radical oxygen is
lowered.

Martin

Martin Walker B.Sc.(Tech.) M.Sc.
Tactical Marketing Engineer
Oxford Instruments Plasma Technology
North End, Yatton, Bristol, BS49 4AP UK
T.+44 (0)1934 837031  F.+44 (0)1934 837001
E. 
W. 


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