Ziggy,

check you substrate parameters first:
1. do you use Bosilicate Glass (you need it for Anodic Bonding)?
2. what is the surface quality (TTV, bow, warpage, microroughness) of your
substrates?
3. surface quality of the deposited Si (roughness)?

bonding parameters suggestion:
450 °C, >1000V,
might help, if you have the chance to contact the Si layer with the anode

We can run some samples  for you (without a charge).

Markus.


SUSS MicroTec
Business Field MEMS
Markus Gabriel
Schleissheimer Str. 90
85748 Garching
Germany
Fon     +49 89 32007 - 313
Fax     +49 89 32007 - 390
email   m.gabriel@suss.de
http://www.suss.com/mems


Date: Fri, 7 Mar 2003 13:15:20 -0600 (CST)
From: Zigurts Majumdar 
Subject: [mems-talk] anodic glass-glass
To: mems-talk@memsnet.org
Message-ID:
        
Content-Type: TEXT/PLAIN; charset=US-ASCII


Hi,
        Does anyone have a good protocol for bonding thick pieces of
glass, about 2 to 5 mm thick? I've tried using an intermediate layer of Si
with ~ 15kV, but it didn't work.

-Ziggy