Dear MEMS-Group,

I'm looking for a way to get a membrane by etching Si (thin n-layer on p
substrate) anisotropically in KOH using an electrochemical etch-stop
techinque.

How can this be done?
What kind of electrodes can be used (Pt?, Au?) in KOH?
How much voltage have to be applied between the KOH-solution and the
n-layer?
Will there be a difference in the etch-rate compared to the normal
etch-rate in KOH?



Thanks for your answers
Mark