Nishant,
I have a big stiction problem between a top silicon device layer and
bottom handle layer after I perform a wet HF realease to etch oxide from
underneath the silicon device layer. I have tried the critical  dryer
and it did not help significantly.

--
Shweta Humad


-----Original Message-----
From: mems-talk-bounces+shweta=ece.gatech.edu@memsnet.org
[mailto:mems-talk-bounces+shweta=ece.gatech.edu@memsnet.org] On Behalf
Of kris
Sent: Friday, October 24, 2003 12:29 PM
To: General MEMS discussion
Subject: Re: [mems-talk] polysilicon stiction problem

Nishant,

Can you try dry etching for the removal of the
sacrificial layer under the polysilicon.

You can also try critical point drying after
sacrificial layer is etched.

Another solution is to add dimples(during design)
underneath the polysilicon beams so that it can give
less contact surface area towards liquid underneath.

Kris