An Oxygen plasma clean at the end of your process cycle can help get rid
of the polymers.
Additionally the following can help: start with deposition cycle first,
depending on the aspect ratio of the features you are etching use a
significantly shorter deposition time (for example, less than half of
the etch time) and/or end with a long etch cycle at the end.
The actual cycle times for deposition, etch and/or oxygen plasma clean
would depend on the aspect ratio of the features, available photo-resist
at the end of the process cycle and also the etch rates for the oxygen
plasma clean. You may need to do a parametric experimental study for the
cycle times, coil/platen power and pressures to optimize the
fluorocarbon removal.
Debjyoti Banerjee, Ph.D.
Microfluidics Engineer
NanoInk, Inc.
215 E. Hacienda Avenue
Campbell, CA 95008.
Ph: (408) 379-9069 x202
Fax: (408) 379-9072
Email: debban@nanoink.net
www.nanoink.net
-----Original Message-----
From: mems-talk-bounces+debban=nanoink.net@memsnet.org
[mailto:mems-talk-bounces+debban=nanoink.net@memsnet.org] On Behalf Of
roberto Campedelli
Sent: Friday, December 05, 2003 6:29 AM
To: mems-talk@memsnet.org
Cc: roberto.campedelli@st.com
Subject: [mems-talk] fluorocarbon residue removal in silicon DRIE
Hello, did you solve the problem with removing fluorocarbon polymers?
Roberto Campedelli
process engineer STMicroelectronics
_______________________________________________
MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
Hosted by the MEMS Exchange, providers of MEMS processing services.
Visit us at http://www.memsnet.org/