i didn't try the evaporation method before but the best result will be using
another masking layer with a optimizing condition... 4 times better than using
the cr/au ...
________________________________
From: mems-talk-bounces+vincent_79=pmail.ntu.edu.sg@memsnet.org on behalf of
Aegis
Sent: Sun 12/7/2003 2:36 PM
To: 'General MEMS discussion'
Subject: RE: [mems-talk] Etch mask for glass etching
I do not understand the exactly meaning of "collapse and give way to". If
you mean the Cr/Au film swinging in etchant just like tissues in water (but
no separate from glass), I can tell you the same thing happened in the DC
sputtering film (Cr/Au:400A/1500A). The serious problem of sputtering film
is pinhole in the HF etching process, although additional PR layer will
help.
May I ask the pinholes also happened by using resistive evaporation method?
-----Original Message-----
From: mems-talk-bounces+equinox=ethome.net.tw@memsnet.org
[mailto:mems-talk-bounces+equinox=ethome.net.tw@memsnet.org] On Behalf Of
Tom Fan
Sent: Saturday, December 06, 2003 9:28 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Etch mask for glass etching
Hi All,
When people use Cr/Au as the etch mask for wet etching of glass, what kind
of
deposition method did they use? I used resistive evaporation method and
found
the metal film collapsed and gave way to the etchant in a very short time. I
suspect the film adhesion is not that good. Maybe sputtering will do a
better
job? Anybody had experience with this situation? Any thoughtful input would
be
appreciated.
Thanks,
Tom Fan
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