High etch rate of silicon using Dry etching method
JoyH Jonesq
2005-08-30
gases required are copper oxide, manganus oxide ...
--- harshal rokade wrote:
> Hi,
>
> We have STS's PC 320 RIE system. i am interested in
> knowing, is it posible to etch silicon using this
> system with very high etch rate may be around
> 20um/min. which gases will be reqiiured?