High contrast photoresist for interference lithography
I am looking for a high-contrast, high-resolution photoresist to use for
interference lithography. Our source is a HeCd laser operating at the
442 nm line. Ultimately, we would like to use the resist as an etch
mask, so resistance to fluorine-based chemistry would be beneficial but
isn't strictly necessary.
I have been working with ma-p 1205 but I have difficulty getting steep
sidewalls. I have gotten some good prints using a diluted SPR 220 in
the past, but I have had difficulty getting consistent dilutions so I
would prefer a commercial pre-mixed product.
As I understand it, the high-resolution requirement requires a low
viscosity resist that will produce a thin layer when spin coated. (Since
we are doing an interference lithography we don't have depth of focus
issues, but there's still a limit on the aspect ratio for the lines that
limits the resist thickness to less than a micron.)
To summarize, I'm looking for a photoresist that has the following
1) Sensitive at 442 nm (g-line resists seem fine)
2) Low viscosity; film thickness less than 1 micron
3) High contrast (large change in development rate when exposed)
Can anyone recommend a suitable product for this?
Justin M. Hannigan, Ph.D.
Process Development Engineer
875 Wilson St, Unit C
Eugene, OR 97402
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