In RCA, wafer cleaning process, there is a solution of H2O2 + NH3. It is the
best choice for Ag etching (at room temperature).
Zhen YANG, Ph.D.
Surface & Interface Technology Division
Department of Manufacturing Systems
Mechanical Engineering Laboratory
Namiki 1-2, Tsukuba
JAPAN 305-8564
TEL: +81-298-58 7209
FAX: +81-298-58 7167