I plan on using S-1813 positive resist as a mask. The gases that I have
available are SF6, CF4, O2, and H2. Which one of these would you recommend,
if any?
Thanks,
Tony
On Thu, Mar 24, 2011 at 9:50 PM, Robert Ditizio wrote:
> You need high bias power. BCl3 helps if you've got it. Dry etching is
> mostly physical with a minor chemical component. Etch rates will be a few
> hundred angstroms/min, best case. You don't mention if you require
> selectivity to a mask or if you have a mask present. For stopping on the
> alumina, some CF4 or other source of fluorine will help.
>
> Robert
Tony Price
RF Microsystems Research Group
University of South Florida
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