Thanks Robert. Have you patterned BST using RIE before? If so, can you
share your recipe with me so that I will have a starting point (i.e. RF
power, biasing power, gas flow rates, pressure, etc.)?
Tony
On Fri, Mar 25, 2011 at 9:44 PM, Robert Ditizio wrote:
> Tony:
>
> You will want to avoid oxygen since any oxygen will slow the BST etch rate
> and also increase PR loss. Your best bet is probably the CF4. The SF6 is
> likely to have lower selectivity to the mask than the CF4 and the
> consumption of fluorine is likely to be low so the difference in BST etch
> rate is likely to be small. The hydrogen could help.
>
> Robert
>
> On Mar 25, 2011 2:45 PM, "Tony Price" wrote:
> > I plan on using S-1813 positive resist as a mask. The gases that I have
> > available are SF6, CF4, O2, and H2. Which one of these would you
> recommend,
> > if any?
> >
> > Thanks,
> > Tony
Tony Price
RF Microsystems Research Group
University of South Florida
4202 E. Fowler Avenue, ENB-118,
Tampa, FL, 33620
Office: ENB 412
Phone: (404) 291-3506