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MEMSnet Home: MEMS-Talk: What is the etch rate of SU-8 in O2 plasma?
What is the etch rate of SU-8 in O2 plasma?
2003-03-07
S.O. Ryu
What is the best first layer for the multi-layer process?
2003-03-07
Park, Sang Won (Daniel)
2003-03-07
BobHendu@aol.com
2003-03-10
Isaac Wing Tak Chan
2003-03-13
Greg Reimann
2003-03-13
Christopher F. Blanford
2003-03-14
Isaac Wing Tak Chan
2003-03-13
Isaac Wing Tak Chan
2003-03-12
BobHendu@aol.com
2003-03-13
Isaac Wing Tak Chan
What is the etch rate of SU-8 in O2 plasma?
Isaac Wing Tak Chan
2003-03-13
Hi Bob,

        Thank you very much for your suggestions. I am currently trying
gas mixture of O2/CF4 and O2/Ar and seems to get improvement. But I can't
conclude anything until I do some more experiments to verify. I'll keep
your contact in case I need some further discussions. Thanks a lot.


Isaac

On Wed, 12 Mar 2003 BobHendu@aol.com wrote:

> Isaac:
>
> I have not noticed a film left behind when stripping SU-8 but normally we are
just interested in the selectivity when we do deep silicon etch. Have you tried
to do a chemical clean after using H2SO4+H2O2? What might be left is non organic
material incorporated into the SU_8 which gives it is epoxy properties. Try a
wet clean and see if it goes away. Give me a call if you want to discuss
further. Bob Henderson 480-968-8818 x11
>
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Yours sincerely,

Isaac Chan

Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, Canada
N2L 3V1
Tel: (519) 729-6409, ext. 6014
Fax: (519) 746-6321
iwchan@venus.uwaterloo.ca
http://www.ece.uwaterloo.ca/~a-sidic


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