Hi Bob,
Thank you very much for your suggestions. I am currently trying
gas mixture of O2/CF4 and O2/Ar and seems to get improvement. But I can't
conclude anything until I do some more experiments to verify. I'll keep
your contact in case I need some further discussions. Thanks a lot.
Isaac
On Wed, 12 Mar 2003 [email protected] wrote:
> Isaac:
>
> I have not noticed a film left behind when stripping SU-8 but normally we are
just interested in the selectivity when we do deep silicon etch. Have you tried
to do a chemical clean after using H2SO4+H2O2? What might be left is non organic
material incorporated into the SU_8 which gives it is epoxy properties. Try a
wet clean and see if it goes away. Give me a call if you want to discuss
further. Bob Henderson 480-968-8818 x11
>
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Yours sincerely,
Isaac Chan
Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, Canada
N2L 3V1
Tel: (519) 729-6409, ext. 6014
Fax: (519) 746-6321
i[email protected]
http://www.ece.uwaterloo.ca/~a-sidic
